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@INPROCEEDINGS{Fox:826619,
      author       = {Fox, A. and Mikulics, M. and Marso, M. and Kocan, M. and
                      Sofer, Z. and Kordos, P. and Luth, H. and Schubert, J. and
                      Grutzmacher, D. and Hardtdegen, H.},
      title        = {{H}ighly reliable long-term operation of
                      {A}l{G}a{N}/{G}a{N}/{A}l{N} {HFET}s grown on silver
                      substrate},
      publisher    = {IEEE},
      reportid     = {FZJ-2017-00838},
      pages        = {65-68},
      year         = {2016},
      note         = {ISBN 978-1-5090-3083-5},
      abstract     = {We developed a novel "combined" two-step epitaxial
                      procedure based on MO VP E and MB E for an optimized growth
                      of group III-nitride layers on silver-metallic substrates.
                      The AlGaN/GaN/AlN heterostructures were used for the
                      fabrication of HFETs. The electrical properties as well as
                      the long-term operation properties were systematically
                      studied and compared with conventional devices. The improved
                      heat dissipation in heterostructures deposited directly on a
                      silver substrate leads to a significant decrease in channel
                      temperature $(−60\%$ at 7W/mm) and affects the long term
                      stability of the drain current (± $2\%)$ favorably in the
                      whole range under investigation (up to ∼1000 hours)
                      compared with conventional AlGaN/GaN layers grown on
                      sapphire substrates. The results presented demonstrate the
                      great potential of the novel material-device concept.},
      month         = {Nov},
      date          = {2016-11-13},
      organization  = {2016 11th International Conference on
                       Advanced Semiconductor Devices $\&$
                       Microsystems (ASDAM), Smolenice
                       (Slovakia), 13 Nov 2016 - 16 Nov 2016},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.1109/ASDAM.2016.7805896},
      url          = {https://juser.fz-juelich.de/record/826619},
}