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| Hauptseite > Publikationsdatenbank > Highly reliable long-term operation of AlGaN/GaN/AlN HFETs grown on silver substrate > print |
| Hauptseite > Publikationsdatenbank > Highly reliable long-term operation of AlGaN/GaN/AlN HFETs grown on silver substrate > print |
| 001 | 826619 | ||
| 005 | 20210129225644.0 | ||
| 024 | 7 | _ | |a 10.1109/ASDAM.2016.7805896 |2 doi |
| 037 | _ | _ | |a FZJ-2017-00838 |
| 100 | 1 | _ | |a Fox, A. |0 P:(DE-Juel1)125583 |b 0 |u fzj |
| 111 | 2 | _ | |a 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) |c Smolenice |d 2016-11-13 - 2016-11-16 |w Slovakia |
| 245 | _ | _ | |a Highly reliable long-term operation of AlGaN/GaN/AlN HFETs grown on silver substrate |
| 260 | _ | _ | |c 2016 |b IEEE |
| 300 | _ | _ | |a 65-68 |
| 336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
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| 336 | 7 | _ | |a Contribution to a conference proceedings |b contrib |m contrib |0 PUB:(DE-HGF)8 |s 1485412673_32147 |2 PUB:(DE-HGF) |
| 500 | _ | _ | |a ISBN 978-1-5090-3083-5 |
| 520 | _ | _ | |a We developed a novel "combined" two-step epitaxial procedure based on MO VP E and MB E for an optimized growth of group III-nitride layers on silver-metallic substrates. The AlGaN/GaN/AlN heterostructures were used for the fabrication of HFETs. The electrical properties as well as the long-term operation properties were systematically studied and compared with conventional devices. The improved heat dissipation in heterostructures deposited directly on a silver substrate leads to a significant decrease in channel temperature (−60% at 7W/mm) and affects the long term stability of the drain current (± 2%) favorably in the whole range under investigation (up to ∼1000 hours) compared with conventional AlGaN/GaN layers grown on sapphire substrates. The results presented demonstrate the great potential of the novel material-device concept. |
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| 700 | 1 | _ | |a Mikulics, M. |0 P:(DE-Juel1)128613 |b 1 |e Corresponding author |u fzj |
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| 773 | _ | _ | |a 10.1109/ASDAM.2016.7805896 |
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