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000826620 1001_ $$0P:(DE-Juel1)128608$$aLuth, H.$$b0
000826620 1112_ $$a2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)$$cSmolenice$$d2016-11-13 - 2016-11-16$$wSlovakia
000826620 245__ $$aInGaN mesoscopic structures for low energy consumption nano-opto-electronics
000826620 260__ $$bIEEE$$c2016
000826620 300__ $$a69-72
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000826620 520__ $$aNano-LEDs based on mesoscopic structures are the key elements for future energy saving nano-opto-electronics as well as for fast and highly secure optical communication. We present first results using a vertical device layout in which nano-LED emitters based on InGaN mesoscopic structures deposited by metalorganic vapor phase epitaxy (MOVPE) were implemented. The nano-LEDs were integrated in a vertical device layout without degradation of their optical and electrical properties. The results presented demonstrate the great promise of the novel device concept and integration technology for low energy consumption nano-opto-electronics operated in the telecommunication wavelength range.
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000826620 7001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b1$$eCorresponding author
000826620 7001_ $$0P:(DE-HGF)0$$aWinden, A.$$b2
000826620 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, St.$$b3
000826620 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b4
000826620 7001_ $$0P:(DE-HGF)0$$aMarso, M.$$b5
000826620 7001_ $$0P:(DE-Juel1)125588$$aGrutzmacher, D.$$b6
000826620 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, H.$$b7
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