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@INPROCEEDINGS{Luth:826620,
author = {Luth, H. and Mikulics, M. and Winden, A. and Trellenkamp,
St. and Sofer, Z. and Marso, M. and Grutzmacher, D. and
Hardtdegen, H.},
title = {{I}n{G}a{N} mesoscopic structures for low energy
consumption nano-opto-electronics},
publisher = {IEEE},
reportid = {FZJ-2017-00839},
pages = {69-72},
year = {2016},
note = {ISBN 978-1-5090-3083-5},
abstract = {Nano-LEDs based on mesoscopic structures are the key
elements for future energy saving nano-opto-electronics as
well as for fast and highly secure optical communication. We
present first results using a vertical device layout in
which nano-LED emitters based on InGaN mesoscopic structures
deposited by metalorganic vapor phase epitaxy (MOVPE) were
implemented. The nano-LEDs were integrated in a vertical
device layout without degradation of their optical and
electrical properties. The results presented demonstrate the
great promise of the novel device concept and integration
technology for low energy consumption nano-opto-electronics
operated in the telecommunication wavelength range.},
month = {Nov},
date = {2016-11-13},
organization = {2016 11th International Conference on
Advanced Semiconductor Devices $\&$
Microsystems (ASDAM), Smolenice
(Slovakia), 13 Nov 2016 - 16 Nov 2016},
cin = {PGI-9 / PGI-8-PT},
cid = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-8-PT-20110228},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)8},
doi = {10.1109/ASDAM.2016.7805897},
url = {https://juser.fz-juelich.de/record/826620},
}