Contribution to a conference proceedings

FZJ-2017-00842

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Fabrication of UV sources for novel lithographical techniques: Development of nano-LED etching procedures

Moers, J.FZJ* ; Mikulics, M. (Corresponding author)FZJ* ; Marso, M. ; Trellenkamp, S.PGI-8-PT* ; Sofer, Z. ; Grutzmacher, D.FZJ* ; Hardtdegen, H.FZJ*

2016
IEEE

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Please use a persistent id in citations: doi:10.1109/ASDAM.2016.7805900

Abstract: The development of two different dry etching approaches — ion beam etching (IBE) and reactive ion etching (RIE) — is reported for the fabrication of nano-LEDs as UV sources. The IBE approach leads to nano-LEDs with higher emission intensity but with rougher side-walls and broader FWHM.

Note: ISBN 978-1-5090-3083-5

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. PGI-8-PT (PGI-8-PT)
3. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
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