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@INPROCEEDINGS{Moers:826623,
      author       = {Moers, Jürgen and Mikulics, M. and Marso, M. and
                      Trellenkamp, St. and Sofer, Z. and Grutzmacher, D. and
                      Hardtdegen, H.},
      title        = {{F}abrication of {UV} sources for novel lithographical
                      techniques: {D}evelopment of nano-{LED} etching procedures},
      publisher    = {IEEE},
      reportid     = {FZJ-2017-00842},
      pages        = {81-84},
      year         = {2016},
      note         = {ISBN 978-1-5090-3083-5},
      abstract     = {The development of two different dry etching approaches —
                      ion beam etching (IBE) and reactive ion etching (RIE) — is
                      reported for the fabrication of nano-LEDs as UV sources. The
                      IBE approach leads to nano-LEDs with higher emission
                      intensity but with rougher side-walls and broader FWHM.},
      month         = {Nov},
      date          = {2016-11-13},
      organization  = {2016 11th International Conference on
                       Advanced Semiconductor Devices $\&$
                       Microsystems (ASDAM), Smolenice
                       (Slovakia), 13 Nov 2016 - 16 Nov 2016},
      cin          = {PGI-9 / PGI-8-PT / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-8-PT-20110228
                      / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.1109/ASDAM.2016.7805900},
      url          = {https://juser.fz-juelich.de/record/826623},
}