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000826623 0247_ $$2doi$$a10.1109/ASDAM.2016.7805900
000826623 037__ $$aFZJ-2017-00842
000826623 1001_ $$0P:(DE-Juel1)128616$$aMoers, Jürgen$$b0$$ufzj
000826623 1112_ $$a2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)$$cSmolenice$$d2016-11-13 - 2016-11-16$$wSlovakia
000826623 245__ $$aFabrication of UV sources for novel lithographical techniques: Development of nano-LED etching procedures
000826623 260__ $$bIEEE$$c2016
000826623 300__ $$a81-84
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000826623 520__ $$aThe development of two different dry etching approaches — ion beam etching (IBE) and reactive ion etching (RIE) — is reported for the fabrication of nano-LEDs as UV sources. The IBE approach leads to nano-LEDs with higher emission intensity but with rougher side-walls and broader FWHM.
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000826623 7001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b1$$eCorresponding author
000826623 7001_ $$0P:(DE-HGF)0$$aMarso, M.$$b2
000826623 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, St.$$b3
000826623 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b4
000826623 7001_ $$0P:(DE-Juel1)125588$$aGrutzmacher, D.$$b5
000826623 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, H.$$b6
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