%0 Conference Paper
%A Mikulics, M.
%A Marso, M.
%A Adam, R.
%A Schuck, M.
%A Fox, A.
%A Sobolewski, R.
%A Kordos, P.
%A Luth, H.
%A Grutzmacher, D.
%A Hardtdegen, H.
%T Electrical and optical characterization of freestanding Ge1Sb2Te4 nano-membranes integrated in coplanar strip lines
%I IEEE
%M FZJ-2017-00843
%P 73-76
%D 2016
%<  
%X We developed a transfer and integration technique for freestanding Ge1Sb2Te4 nano-membranes. A so-called laser micro annealing process for the precisely-local formation of low resistance Ge1Sb2Te4/Ti/Au ohmic contacts was optimized. Ultrafast switching effects were studied on nano-membrane devices after their implementation into a group III-nitride based optoelectronic circuit. Highly resistive switching was observed without any noticeable structural deterioration. Charge transport measurements indicate that current densities exhibit values in the "READ resp. SET/RESET" regime from 10-6 down to 10-11A/μm3 after ~100 switching cycles. Our study on freestanding Ge1Sb2Te4 nano-membranes contributes to a better understanding of charge transport related physical phenomena in novel chalcogenide material systems with high potential for future low energy consumption data storage devices.
%B 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
%C 13 Nov 2016 - 16 Nov 2016, Smolenice (Slovakia)
Y2 13 Nov 2016 - 16 Nov 2016
M2 Smolenice, Slovakia
%F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
%9 Contribution to a conference proceedingsContribution to a book
%R 10.1109/ASDAM.2016.7805898
%U https://juser.fz-juelich.de/record/826624