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000826624 1001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b0$$eCorresponding author
000826624 1112_ $$a2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)$$cSmolenice$$d2016-11-13 - 2016-11-16$$wSlovakia
000826624 245__ $$aElectrical and optical characterization of freestanding Ge1Sb2Te4 nano-membranes integrated in coplanar strip lines
000826624 260__ $$bIEEE$$c2016
000826624 29510 $$a 
000826624 300__ $$a73-76
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000826624 520__ $$aWe developed a transfer and integration technique for freestanding Ge1Sb2Te4 nano-membranes. A so-called laser micro annealing process for the precisely-local formation of low resistance Ge1Sb2Te4/Ti/Au ohmic contacts was optimized. Ultrafast switching effects were studied on nano-membrane devices after their implementation into a group III-nitride based optoelectronic circuit. Highly resistive switching was observed without any noticeable structural deterioration. Charge transport measurements indicate that current densities exhibit values in the "READ resp. SET/RESET" regime from 10-6 down to 10-11A/μm3 after ~100 switching cycles. Our study on freestanding Ge1Sb2Te4 nano-membranes contributes to a better understanding of charge transport related physical phenomena in novel chalcogenide material systems with high potential for future low energy consumption data storage devices.
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000826624 7001_ $$0P:(DE-HGF)0$$aMarso, M.$$b1
000826624 7001_ $$0P:(DE-Juel1)130495$$aAdam, R.$$b2
000826624 7001_ $$0P:(DE-HGF)0$$aSchuck, M.$$b3
000826624 7001_ $$0P:(DE-Juel1)125583$$aFox, A.$$b4
000826624 7001_ $$0P:(DE-HGF)0$$aSobolewski, R.$$b5
000826624 7001_ $$0P:(DE-HGF)0$$aKordos, P.$$b6
000826624 7001_ $$0P:(DE-Juel1)128608$$aLuth, H.$$b7
000826624 7001_ $$0P:(DE-Juel1)125588$$aGrutzmacher, D.$$b8
000826624 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, H.$$b9
000826624 773__ $$a10.1109/ASDAM.2016.7805898
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000826624 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x1
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