TY  - CONF
AU  - Mikulics, M.
AU  - Marso, M.
AU  - Adam, R.
AU  - Schuck, M.
AU  - Fox, A.
AU  - Sobolewski, R.
AU  - Kordos, P.
AU  - Luth, H.
AU  - Grutzmacher, D.
AU  - Hardtdegen, H.
TI  - Electrical and optical characterization of freestanding Ge1Sb2Te4 nano-membranes integrated in coplanar strip lines
PB  - IEEE
M1  - FZJ-2017-00843
SP  - 73-76
PY  - 2016
AB  - We developed a transfer and integration technique for freestanding Ge1Sb2Te4 nano-membranes. A so-called laser micro annealing process for the precisely-local formation of low resistance Ge1Sb2Te4/Ti/Au ohmic contacts was optimized. Ultrafast switching effects were studied on nano-membrane devices after their implementation into a group III-nitride based optoelectronic circuit. Highly resistive switching was observed without any noticeable structural deterioration. Charge transport measurements indicate that current densities exhibit values in the "READ resp. SET/RESET" regime from 10-6 down to 10-11A/μm3 after ~100 switching cycles. Our study on freestanding Ge1Sb2Te4 nano-membranes contributes to a better understanding of charge transport related physical phenomena in novel chalcogenide material systems with high potential for future low energy consumption data storage devices.
T2  - 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
CY  - 13 Nov 2016 - 16 Nov 2016, Smolenice (Slovakia)
Y2  - 13 Nov 2016 - 16 Nov 2016
M2  - Smolenice, Slovakia
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
DO  - DOI:10.1109/ASDAM.2016.7805898
UR  - https://juser.fz-juelich.de/record/826624
ER  -