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@INPROCEEDINGS{Mikulics:826624,
      author       = {Mikulics, M. and Marso, M. and Adam, R. and Schuck, M. and
                      Fox, A. and Sobolewski, R. and Kordos, P. and Luth, H. and
                      Grutzmacher, D. and Hardtdegen, H.},
      title        = {{E}lectrical and optical characterization of freestanding
                      {G}e1{S}b2{T}e4 nano-membranes integrated in coplanar strip
                      lines},
      publisher    = {IEEE},
      reportid     = {FZJ-2017-00843},
      pages        = {73-76},
      year         = {2016},
      comment      = {},
      booktitle     = {},
      abstract     = {We developed a transfer and integration technique for
                      freestanding Ge1Sb2Te4 nano-membranes. A so-called laser
                      micro annealing process for the precisely-local formation of
                      low resistance Ge1Sb2Te4/Ti/Au ohmic contacts was optimized.
                      Ultrafast switching effects were studied on nano-membrane
                      devices after their implementation into a group III-nitride
                      based optoelectronic circuit. Highly resistive switching was
                      observed without any noticeable structural deterioration.
                      Charge transport measurements indicate that current
                      densities exhibit values in the "READ resp. SET/RESET"
                      regime from 10-6 down to 10-11A/μm3 after ~100 switching
                      cycles. Our study on freestanding Ge1Sb2Te4 nano-membranes
                      contributes to a better understanding of charge transport
                      related physical phenomena in novel chalcogenide material
                      systems with high potential for future low energy
                      consumption data storage devices.},
      month         = {Nov},
      date          = {2016-11-13},
      organization  = {2016 11th International Conference on
                       Advanced Semiconductor Devices $\&$
                       Microsystems (ASDAM), Smolenice
                       (Slovakia), 13 Nov 2016 - 16 Nov 2016},
      cin          = {PGI-9 / PGI-6},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-6-20110106},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1109/ASDAM.2016.7805898},
      url          = {https://juser.fz-juelich.de/record/826624},
}