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| Hauptseite > Publikationsdatenbank > Electrical and optical characterization of freestanding Ge1Sb2Te4 nano-membranes integrated in coplanar strip lines > print |
| Hauptseite > Publikationsdatenbank > Electrical and optical characterization of freestanding Ge1Sb2Te4 nano-membranes integrated in coplanar strip lines > print |
| 001 | 826624 | ||
| 005 | 20210129225645.0 | ||
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| 100 | 1 | _ | |a Mikulics, M. |0 P:(DE-Juel1)128613 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) |c Smolenice |d 2016-11-13 - 2016-11-16 |w Slovakia |
| 245 | _ | _ | |a Electrical and optical characterization of freestanding Ge1Sb2Te4 nano-membranes integrated in coplanar strip lines |
| 260 | _ | _ | |c 2016 |b IEEE |
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| 300 | _ | _ | |a 73-76 |
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| 520 | _ | _ | |a We developed a transfer and integration technique for freestanding Ge1Sb2Te4 nano-membranes. A so-called laser micro annealing process for the precisely-local formation of low resistance Ge1Sb2Te4/Ti/Au ohmic contacts was optimized. Ultrafast switching effects were studied on nano-membrane devices after their implementation into a group III-nitride based optoelectronic circuit. Highly resistive switching was observed without any noticeable structural deterioration. Charge transport measurements indicate that current densities exhibit values in the "READ resp. SET/RESET" regime from 10-6 down to 10-11A/μm3 after ~100 switching cycles. Our study on freestanding Ge1Sb2Te4 nano-membranes contributes to a better understanding of charge transport related physical phenomena in novel chalcogenide material systems with high potential for future low energy consumption data storage devices. |
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