Contribution to a conference proceedings

FZJ-2017-00844

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Hybrid optoelectronics based on a nanocrystal/III-N nano-LED platform

Marso, M. ; Mikulics, M. (Corresponding author)FZJ* ; Luth, H.FZJ* ; Sofer, Z. ; Kordos, P. ; Hardtdegen, H.FZJ*

2016
IEEE

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Please use a persistent id in citations: doi:10.1109/ASDAM.2016.7805899

Abstract: We fabricated and tested hybrid-III-nitride (CdSe nanocrystal/p-GaN/MQW/n-GaN/sapphire) based nano-LEDs and integrated them into a device layout suitable for DC testing and designed for future operation at high frequencies. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long-term operation without any indication of degradation effects. This novel technology shows strong potential for a future single photon based OE circuit.

Note: ISBN: 978-1-5090-3083-5

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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