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000826625 037__ $$aFZJ-2017-00844
000826625 1001_ $$0P:(DE-HGF)0$$aMarso, M.$$b0
000826625 1112_ $$a2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)$$cSmolenice$$d2016-11-13 - 2016-11-16$$wSlovakia
000826625 245__ $$aHybrid optoelectronics based on a nanocrystal/III-N nano-LED platform
000826625 260__ $$bIEEE$$c2016
000826625 300__ $$a77-80
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000826625 500__ $$aISBN: 978-1-5090-3083-5 
000826625 520__ $$aWe fabricated and tested hybrid-III-nitride (CdSe nanocrystal/p-GaN/MQW/n-GaN/sapphire) based nano-LEDs and integrated them into a device layout suitable for DC testing and designed for future operation at high frequencies. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long-term operation without any indication of degradation effects. This novel technology shows strong potential for a future single photon based OE circuit.
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000826625 7001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b1$$eCorresponding author$$ufzj
000826625 7001_ $$0P:(DE-Juel1)128608$$aLuth, H.$$b2$$ufzj
000826625 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b3
000826625 7001_ $$0P:(DE-HGF)0$$aKordos, P.$$b4
000826625 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, H.$$b5$$ufzj
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