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@INPROCEEDINGS{Marso:826625,
author = {Marso, M. and Mikulics, M. and Luth, H. and Sofer, Z. and
Kordos, P. and Hardtdegen, H.},
title = {{H}ybrid optoelectronics based on a nanocrystal/{III}-{N}
nano-{LED} platform},
publisher = {IEEE},
reportid = {FZJ-2017-00844},
pages = {77-80},
year = {2016},
note = {ISBN: 978-1-5090-3083-5},
abstract = {We fabricated and tested hybrid-III-nitride (CdSe
nanocrystal/p-GaN/MQW/n-GaN/sapphire) based nano-LEDs and
integrated them into a device layout suitable for DC testing
and designed for future operation at high frequencies. Our
studies provide clear evidence that our technological
process for the vertically integrated nano-LED emitters is
perfectly suited for long-term operation without any
indication of degradation effects. This novel technology
shows strong potential for a future single photon based OE
circuit.},
month = {Nov},
date = {2016-11-13},
organization = {2016 11th International Conference on
Advanced Semiconductor Devices $\&$
Microsystems (ASDAM), Smolenice
(Slovakia), 13 Nov 2016 - 16 Nov 2016},
cin = {PGI-9},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)8},
doi = {10.1109/ASDAM.2016.7805899},
url = {https://juser.fz-juelich.de/record/826625},
}