Hauptseite > Publikationsdatenbank > Hybrid optoelectronics based on a nanocrystal/III-N nano-LED platform > print

001     826625
005     20210129225645.0
024 7 _ |a 10.1109/ASDAM.2016.7805899
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037 _ _ |a FZJ-2017-00844
100 1 _ |a Marso, M.
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111 2 _ |a 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
|c Smolenice
|d 2016-11-13 - 2016-11-16
|w Slovakia
245 _ _ |a Hybrid optoelectronics based on a nanocrystal/III-N nano-LED platform
260 _ _ |c 2016
|b IEEE
300 _ _ |a 77-80
336 7 _ |a CONFERENCE_PAPER
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336 7 _ |a INPROCEEDINGS
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500 _ _ |a ISBN: 978-1-5090-3083-5
520 _ _ |a We fabricated and tested hybrid-III-nitride (CdSe nanocrystal/p-GaN/MQW/n-GaN/sapphire) based nano-LEDs and integrated them into a device layout suitable for DC testing and designed for future operation at high frequencies. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long-term operation without any indication of degradation effects. This novel technology shows strong potential for a future single photon based OE circuit.
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700 1 _ |a Mikulics, M.
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700 1 _ |a Luth, H.
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700 1 _ |a Sofer, Z.
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700 1 _ |a Kordos, P.
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700 1 _ |a Hardtdegen, H.
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773 _ _ |a 10.1109/ASDAM.2016.7805899
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