%0 Journal Article
%A Portz, V.
%A Schnedler, M.
%A Lymperakis, L.
%A Neugebauer, J.
%A Eisele, H.
%A Carlin, J.-F.
%A Butté, R.
%A Grandjean, N.
%A Dunin-Borkowski, Rafal
%A Ebert, Ph.
%T Fermi-level pinning and intrinsic surface states of Al$_{1−x}$In$_{x}$N(101¯0) surfaces
%J Applied physics letters
%V 110
%N 2
%@ 1077-3118
%C Melville, NY
%I American Inst. of Physics
%M FZJ-2017-01023
%P 022104 -
%D 2017
%X The electronic structure of Al1−xInxN(101⎯⎯0) surfaces is investigated by cross-sectional scanning tunneling spectroscopy and density functional theory calculations. The surface exhibits empty Al and/or In-derived dangling bond states, which are calculated to be within the fundamental bulk band gap for In compositions smaller than 60%. The energy of the lowest empty In-derived surface state is extracted from the tunnel spectra for lattice-matched Al1–xInxN with In compositions of x = 0.19 and x = 0.20 to be EC − 1.82 ± 0.41 and EC − 1.80 ± 0.56 eV, respectively, in good agreement with the calculated energies. Under growth conditions, the Fermi level is hence pinned (unpinned) for In compositions smaller (larger) than 60%. The analysis of the tunnel spectra suggests an electron affinity of ∼3.5 eV for nonpolar lattice-matched Al1–xInxN cleavage surfaces, which is large compared to linearly interpolated values of polar AlN and InN (0001) surfaces.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000392835300034
%R 10.1063/1.4973765
%U https://juser.fz-juelich.de/record/826806