TY  - JOUR
AU  - Portz, V.
AU  - Schnedler, M.
AU  - Lymperakis, L.
AU  - Neugebauer, J.
AU  - Eisele, H.
AU  - Carlin, J.-F.
AU  - Butté, R.
AU  - Grandjean, N.
AU  - Dunin-Borkowski, Rafal
AU  - Ebert, Ph.
TI  - Fermi-level pinning and intrinsic surface states of Al$_{1−x}$In$_{x}$N(101¯0) surfaces
JO  - Applied physics letters
VL  - 110
IS  - 2
SN  - 1077-3118
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2017-01023
SP  - 022104 -
PY  - 2017
AB  - The electronic structure of Al1−xInxN(101⎯⎯0) surfaces is investigated by cross-sectional scanning tunneling spectroscopy and density functional theory calculations. The surface exhibits empty Al and/or In-derived dangling bond states, which are calculated to be within the fundamental bulk band gap for In compositions smaller than 60%. The energy of the lowest empty In-derived surface state is extracted from the tunnel spectra for lattice-matched Al1–xInxN with In compositions of x = 0.19 and x = 0.20 to be EC − 1.82 ± 0.41 and EC − 1.80 ± 0.56 eV, respectively, in good agreement with the calculated energies. Under growth conditions, the Fermi level is hence pinned (unpinned) for In compositions smaller (larger) than 60%. The analysis of the tunnel spectra suggests an electron affinity of ∼3.5 eV for nonpolar lattice-matched Al1–xInxN cleavage surfaces, which is large compared to linearly interpolated values of polar AlN and InN (0001) surfaces.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000392835300034
DO  - DOI:10.1063/1.4973765
UR  - https://juser.fz-juelich.de/record/826806
ER  -