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| 001 | 826806 | ||
| 005 | 20240610120356.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4973765 |2 doi |
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| 024 | 7 | _ | |a 1077-3118 |2 ISSN |
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| 100 | 1 | _ | |a Portz, V. |0 P:(DE-Juel1)145975 |b 0 |
| 245 | _ | _ | |a Fermi-level pinning and intrinsic surface states of Al$_{1−x}$In$_{x}$N(101¯0) surfaces |
| 260 | _ | _ | |a Melville, NY |c 2017 |b American Inst. of Physics |
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| 520 | _ | _ | |a The electronic structure of Al1−xInxN(101⎯⎯0) surfaces is investigated by cross-sectional scanning tunneling spectroscopy and density functional theory calculations. The surface exhibits empty Al and/or In-derived dangling bond states, which are calculated to be within the fundamental bulk band gap for In compositions smaller than 60%. The energy of the lowest empty In-derived surface state is extracted from the tunnel spectra for lattice-matched Al1–xInxN with In compositions of x = 0.19 and x = 0.20 to be EC − 1.82 ± 0.41 and EC − 1.80 ± 0.56 eV, respectively, in good agreement with the calculated energies. Under growth conditions, the Fermi level is hence pinned (unpinned) for In compositions smaller (larger) than 60%. The analysis of the tunnel spectra suggests an electron affinity of ∼3.5 eV for nonpolar lattice-matched Al1–xInxN cleavage surfaces, which is large compared to linearly interpolated values of polar AlN and InN (0001) surfaces. |
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