Hauptseite > Publikationsdatenbank > Effects of Moisture and Redox Reactions in VCM and ECM Resistive Switching Memories > print

001     827312
005     20210129225818.0
037 _ _ |a FZJ-2017-01483
100 1 _ |a Valov, Ilia
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111 2 _ |a Materials Research Society Fall Meeting
|c Boston
|d 2016-11-27 - 2016-12-02
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245 _ _ |a Effects of Moisture and Redox Reactions in VCM and ECM Resistive Switching Memories
260 _ _ |c 2016
336 7 _ |a Conference Paper
|0 33
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336 7 _ |a Other
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336 7 _ |a INPROCEEDINGS
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536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
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700 1 _ |a Lübben, Michael
|0 P:(DE-Juel1)162283
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700 1 _ |a Tappertzhofen, S.
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700 1 _ |a Wiefels, S.
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700 1 _ |a Tsuruoka, T.
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700 1 _ |a Hasegawa, T.
|0 P:(DE-HGF)0
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700 1 _ |a Aono, M.
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|b 6
700 1 _ |a Waser, R.
|0 P:(DE-Juel1)131022
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910 1 _ |a Forschungszentrum Jülich
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910 1 _ |a Forschungszentrum Jülich
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913 1 _ |a DE-HGF
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914 1 _ |y 2016
915 _ _ |a No Authors Fulltext
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