Journal Article

FZJ-2017-01487

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electrochemical processes and device improvement in conductive bridge RAM cells

Goux, L. ; Valov, I. (Corresponding author)FZJ*

2016
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/pssa.201532813

Abstract: In this paper, we discuss the recent progress on the fundamental understandings of ECM/CBRAM cells but also on the improved device structures and reliability for high-density applications. The influences of the local chemical environment and the material selection/combination are highlighted, and the filament dynamics is described in a general framework that relates all the reported switching modes. Furthermore we also detail some correlation evidences between the filament shape and device electrical characteristics. Finally, we discuss technological challenges related to current-scaling and cell size-scaling. Large switching variability associated to low current needs to be mitigated by appropriate Write-verify methods, while cell scaling requires novel processing techniques such as Cu dry-etch.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Nationallizenz ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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