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@ARTICLE{Jafari:827388,
      author       = {Jafari, A. and Sergueev, I. and Bessas, D. and Roschin, B.
                      S. and Asadchikov, V. E. and Alexeev, P. and Härtwig, J.
                      and Chumakov, A. I. and Wille, H.-C. and Hermann, Raphael
                      and Klobes, Benedikt},
      title        = {{R}ocking curve imaging of high quality sapphire crystals
                      in backscattering geometry},
      journal      = {Journal of applied physics},
      volume       = {121},
      number       = {4},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2017-01517},
      pages        = {044901},
      year         = {2017},
      abstract     = {We report on the characterization of high quality sapphire
                      single crystals suitable for high-resolution X-ray optics at
                      high energy. Investigations using rocking curve imaging
                      reveal the crystals to be of uniformly good quality at the
                      level of ∼10−4 in lattice parameter variations, δd/d.
                      However, investigations using backscattering rocking curve
                      imaging with a lattice spacing resolution of
                      δd/d∼5×10−8 show very diverse quality maps for all
                      crystals. Our results highlight nearly ideal areas with an
                      edge length of 0.2–0.5 mm in most crystals, but a
                      comparison of the back reflection peak positions shows that
                      even neighboring ideal areas exhibit a relative difference
                      in the lattice parameters on the order of
                      δd/d=10–20×10−8; this is several times larger than the
                      rocking curve width. Stress-strain analysis suggests that an
                      extremely stringent limit on the strain at a level of
                      ∼100 kPa in the growth process is required in order to
                      produce crystals with large areas of the quality required
                      for X-ray optics at high energy.},
      cin          = {JCNS-2 / PGI-4 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)JCNS-2-20110106 / I:(DE-Juel1)PGI-4-20110106 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {144 - Controlling Collective States (POF3-144) / 524 -
                      Controlling Collective States (POF3-524) / 6212 - Quantum
                      Condensed Matter: Magnetism, Superconductivity (POF3-621) /
                      6213 - Materials and Processes for Energy and Transport
                      Technologies (POF3-621) / 6G4 - Jülich Centre for Neutron
                      Research (JCNS) (POF3-623)},
      pid          = {G:(DE-HGF)POF3-144 / G:(DE-HGF)POF3-524 /
                      G:(DE-HGF)POF3-6212 / G:(DE-HGF)POF3-6213 /
                      G:(DE-HGF)POF3-6G4},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000393480100032},
      doi          = {10.1063/1.4974106},
      url          = {https://juser.fz-juelich.de/record/827388},
}