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000827491 1001_ $$0P:(DE-Juel1)161180$$aStange, Daniela$$b0$$eCorresponding author
000827491 245__ $$aShort-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells
000827491 260__ $$aWashington, DC$$bOSA$$c2017
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000827491 520__ $$aGroup IV photonics is on its way to be integrated with electronic circuits, making information transfer and processing faster and more energy efficient. Light sources, a critical component of photonic integrated circuits, are still in development. Here, we compare multi-quantum-well (MQW) light-emitting diodes (LEDs) with Ge0.915Sn0.085 wells and Si0.1Ge0.8Sn0.1 barriers to a reference Ge0.915Sn0.085 homojunction LED. Material properties as well as band structure calculations are discussed, followed by optical investigations. Electroluminescence spectra acquired at various temperatures indicate effective carrier confinement for electrons and holes in the GeSn quantum wells and confirm the excellent performance of GeSn/SiGeSn MQW light emitters.
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000827491 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b1
000827491 7001_ $$0P:(DE-Juel1)166341$$aRainko, Denis$$b2
000827491 7001_ $$0P:(DE-HGF)0$$aRoesgaard, Søren$$b3
000827491 7001_ $$0P:(DE-Juel1)168558$$aPovstugar, Ivan$$b4
000827491 7001_ $$0P:(DE-HGF)0$$aHartmann, Jean-Michel$$b5
000827491 7001_ $$0P:(DE-HGF)0$$aStoica, T.$$b6
000827491 7001_ $$0P:(DE-HGF)0$$aIkonic, Zoran$$b7
000827491 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b8
000827491 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b9
000827491 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b10
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