TY  - JOUR
AU  - Stange, Daniela
AU  - von den Driesch, Nils
AU  - Rainko, Denis
AU  - Roesgaard, Søren
AU  - Povstugar, Ivan
AU  - Hartmann, Jean-Michel
AU  - Stoica, T.
AU  - Ikonic, Zoran
AU  - Mantl, Siegfried
AU  - Grützmacher, Detlev
AU  - Buca, Dan Mihai
TI  - Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells
JO  - Optica
VL  - 4
IS  - 2
SN  - 2334-2536
CY  - Washington, DC
PB  - OSA
M1  - FZJ-2017-01616
SP  - 185-188
PY  - 2017
AB  - Group IV photonics is on its way to be integrated with electronic circuits, making information transfer and processing faster and more energy efficient. Light sources, a critical component of photonic integrated circuits, are still in development. Here, we compare multi-quantum-well (MQW) light-emitting diodes (LEDs) with Ge0.915Sn0.085 wells and Si0.1Ge0.8Sn0.1 barriers to a reference Ge0.915Sn0.085 homojunction LED. Material properties as well as band structure calculations are discussed, followed by optical investigations. Electroluminescence spectra acquired at various temperatures indicate effective carrier confinement for electrons and holes in the GeSn quantum wells and confirm the excellent performance of GeSn/SiGeSn MQW light emitters.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000394536700003
DO  - DOI:10.1364/OPTICA.4.000185
UR  - https://juser.fz-juelich.de/record/827491
ER  -