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@ARTICLE{Stange:827491,
      author       = {Stange, Daniela and von den Driesch, Nils and Rainko, Denis
                      and Roesgaard, Søren and Povstugar, Ivan and Hartmann,
                      Jean-Michel and Stoica, T. and Ikonic, Zoran and Mantl,
                      Siegfried and Grützmacher, Detlev and Buca, Dan Mihai},
      title        = {{S}hort-wave infrared {LED}s from {G}e{S}n/{S}i{G}e{S}n
                      multiple quantum wells},
      journal      = {Optica},
      volume       = {4},
      number       = {2},
      issn         = {2334-2536},
      address      = {Washington, DC},
      publisher    = {OSA},
      reportid     = {FZJ-2017-01616},
      pages        = {185-188},
      year         = {2017},
      abstract     = {Group IV photonics is on its way to be integrated with
                      electronic circuits, making information transfer and
                      processing faster and more energy efficient. Light sources,
                      a critical component of photonic integrated circuits, are
                      still in development. Here, we compare multi-quantum-well
                      (MQW) light-emitting diodes (LEDs) with Ge0.915Sn0.085 wells
                      and Si0.1Ge0.8Sn0.1 barriers to a reference Ge0.915Sn0.085
                      homojunction LED. Material properties as well as band
                      structure calculations are discussed, followed by optical
                      investigations. Electroluminescence spectra acquired at
                      various temperatures indicate effective carrier confinement
                      for electrons and holes in the GeSn quantum wells and
                      confirm the excellent performance of GeSn/SiGeSn MQW light
                      emitters.},
      cin          = {PGI-9 / JARA-FIT / ZEA-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000394536700003},
      doi          = {10.1364/OPTICA.4.000185},
      url          = {https://juser.fz-juelich.de/record/827491},
}