%0 Conference Paper
%A Casu, E. A.
%A Vitale, W. A.
%A Oliva, N.
%A Rosca, T.
%A Biswas, A.
%A Alper, C.
%A Krammer, A.
%A Luong, G. V.
%A Zhao, Q. T.
%A Mantl, S.
%A Schuler, A.
%A Seabaugh, A.
%A Ionescu, A. M.
%T Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking
%I IEEE
%M FZJ-2017-01797
%P 508-511
%D 2016
%Z  ISBN 978-1-5090-3902-9
%X In this paper we report the first hybrid Phase-Change — Tunnel FET (PC-TFET) device configurations for achieving a deep sub-thermionic steep subthreshold swing at room temperature and subthreshold power savings. The proposed hybrid device feedbacks the steep transition of Metal-Insulator transition in a VO2 structure into Gate or Source configurations of strained silicon nanowire Tunnel FETs, to achieve a switching with lon/Ioff better that 5.5×106 and with a subthreshold swing of 4.0 mV/dec at 25 °C. We demonstrate that the principle of PC-TFET switching relates to an internal amplification resulting in a sub-unity body factor, m, which is reduced to values below 0.1 for a current range larger than 2–3 decades. We report a full experimental digital and analog benchmarking of the new device and compare it with Tunnel FETs and CMOS. Remarkably, the PC-TFET can achieve analog figures of merit like gm/Id breaking the 40 V−1 limit of MOSFETs. We demonstrate and report the first buffered oscillator cell for neuromorphic computing exploiting the gate configuration of PC-TFET.
%B 2016 IEEE International Electron Devices Meeting (IEDM)
%C 3 Dec 2016 - 7 Dec 2016, San Francisco (CA)
Y2 3 Dec 2016 - 7 Dec 2016
M2 San Francisco, CA
%F PUB:(DE-HGF)8
%9 Contribution to a conference proceedings
%R 10.1109/IEDM.2016.7838452
%U https://juser.fz-juelich.de/record/827684