Contribution to a conference proceedings

FZJ-2017-01797

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

Casu, E. A. ; Vitale, W. A. ; Oliva, N. ; Rosca, T. ; Biswas, A. ; Alper, C. ; Krammer, A. ; Luong, G. V.FZJ* ; Zhao, Q. T.FZJ* ; Mantl, S.FZJ* ; Schuler, A. ; Seabaugh, A. ; Ionescu, A. M.

2016
IEEE

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Please use a persistent id in citations: doi:10.1109/IEDM.2016.7838452

Abstract: In this paper we report the first hybrid Phase-Change — Tunnel FET (PC-TFET) device configurations for achieving a deep sub-thermionic steep subthreshold swing at room temperature and subthreshold power savings. The proposed hybrid device feedbacks the steep transition of Metal-Insulator transition in a VO2 structure into Gate or Source configurations of strained silicon nanowire Tunnel FETs, to achieve a switching with lon/Ioff better that 5.5×106 and with a subthreshold swing of 4.0 mV/dec at 25 °C. We demonstrate that the principle of PC-TFET switching relates to an internal amplification resulting in a sub-unity body factor, m, which is reduced to values below 0.1 for a current range larger than 2–3 decades. We report a full experimental digital and analog benchmarking of the new device and compare it with Tunnel FETs and CMOS. Remarkably, the PC-TFET can achieve analog figures of merit like gm/Id breaking the 40 V−1 limit of MOSFETs. We demonstrate and report the first buffered oscillator cell for neuromorphic computing exploiting the gate configuration of PC-TFET.

Note: ISBN 978-1-5090-3902-9

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017

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