TY  - CONF
AU  - Casu, E. A.
AU  - Vitale, W. A.
AU  - Oliva, N.
AU  - Rosca, T.
AU  - Biswas, A.
AU  - Alper, C.
AU  - Krammer, A.
AU  - Luong, G. V.
AU  - Zhao, Q. T.
AU  - Mantl, S.
AU  - Schuler, A.
AU  - Seabaugh, A.
AU  - Ionescu, A. M.
TI  - Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking
PB  - IEEE
M1  - FZJ-2017-01797
SP  - 508-511
PY  - 2016
N1  -  ISBN 978-1-5090-3902-9
AB  - In this paper we report the first hybrid Phase-Change — Tunnel FET (PC-TFET) device configurations for achieving a deep sub-thermionic steep subthreshold swing at room temperature and subthreshold power savings. The proposed hybrid device feedbacks the steep transition of Metal-Insulator transition in a VO2 structure into Gate or Source configurations of strained silicon nanowire Tunnel FETs, to achieve a switching with lon/Ioff better that 5.5×106 and with a subthreshold swing of 4.0 mV/dec at 25 °C. We demonstrate that the principle of PC-TFET switching relates to an internal amplification resulting in a sub-unity body factor, m, which is reduced to values below 0.1 for a current range larger than 2–3 decades. We report a full experimental digital and analog benchmarking of the new device and compare it with Tunnel FETs and CMOS. Remarkably, the PC-TFET can achieve analog figures of merit like gm/Id breaking the 40 V−1 limit of MOSFETs. We demonstrate and report the first buffered oscillator cell for neuromorphic computing exploiting the gate configuration of PC-TFET.
T2  - 2016 IEEE International Electron Devices Meeting (IEDM)
CY  - 3 Dec 2016 - 7 Dec 2016, San Francisco (CA)
Y2  - 3 Dec 2016 - 7 Dec 2016
M2  - San Francisco, CA
LB  - PUB:(DE-HGF)8
DO  - DOI:10.1109/IEDM.2016.7838452
UR  - https://juser.fz-juelich.de/record/827684
ER  -