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| Home > Publications database > Insulator-semiconductor-metallic state transition induced by electric fields in Mn-doped NaNbO3 > print |
| 001 | 8281 | ||
| 005 | 20180208200151.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1002/pssr.200903052 |
| 024 | 7 | _ | |2 WOS |a WOS:000268708800007 |
| 037 | _ | _ | |a PreJuSER-8281 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Molak, A. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Insulator-semiconductor-metallic state transition induced by electric fields in Mn-doped NaNbO3 |
| 260 | _ | _ | |a Weinheim |b Wiley-VCH |c 2009 |
| 300 | _ | _ | |a 127 - 129 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Physica Status Solidi - Rapid Research Letters |x 1862-6254 |0 16681 |y 5 |v 3 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The electro-forming procedure was applied to NaNbO3: Mn and NaNbO3 insulator crystals. The electric current flow induced a transition to the metallic-type temperature dependence of the resistance. The Mn dopant shortened the time needed for the transition. The LC-AFM measurement showed a non-homogeneous distribution in local resistance resulting from the electric field via the AFM tip. We ascribe this effect to percolation in the network of the highly conducting filaments, whose formation is facilitated by the Mn ions. We conclude that the insulator-metal transition is induced within a subsystem of extended defects already existing in the NaNbO3 : Mn crystal lattice host. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 700 | 1 | _ | |a Szot, K. |b 1 |u FZJ |0 P:(DE-Juel1)VDB2799 |
| 773 | _ | _ | |a 10.1002/pssr.200903052 |g Vol. 3, p. 127 - 129 |p 127 - 129 |q 3<127 - 129 |0 PERI:(DE-600)2259465-6 |t Physica status solidi / Rapid research letters |v 3 |y 2009 |x 1862-6254 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1002/pssr.200903052 |
| 909 | C | O | |o oai:juser.fz-juelich.de:8281 |p VDB |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |y 2009 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 915 | _ | _ | |0 StatID:(DE-HGF)0020 |a No peer review |
| 920 | 1 | _ | |d 31.12.2010 |g IFF |k IFF-6 |l Elektronische Materialien |0 I:(DE-Juel1)VDB786 |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)117199 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
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| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
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