Journal Article

PreJuSER-8281

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Insulator-semiconductor-metallic state transition induced by electric fields in Mn-doped NaNbO3

Molak, A. ; Szot, K.FZJ*

2009
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/pssr.200903052

Abstract: The electro-forming procedure was applied to NaNbO3: Mn and NaNbO3 insulator crystals. The electric current flow induced a transition to the metallic-type temperature dependence of the resistance. The Mn dopant shortened the time needed for the transition. The LC-AFM measurement showed a non-homogeneous distribution in local resistance resulting from the electric field via the AFM tip. We ascribe this effect to percolation in the network of the highly conducting filaments, whose formation is facilitated by the Mn ions. We conclude that the insulator-metal transition is induced within a subsystem of extended defects already existing in the NaNbO3 : Mn crystal lattice host. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2009

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