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@ARTICLE{Gity:828117,
      author       = {Gity, Farzan and Ansari, Lida and Lanius, Martin and
                      Schüffelgen, Peter and Mussler, Gregor and Grützmacher,
                      Detlev and Greer, J. C.},
      title        = {{R}einventing solid state electronics: {H}arnessing quantum
                      confinement in bismuth thin films},
      journal      = {Applied physics letters},
      volume       = {110},
      number       = {9},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2017-02114},
      pages        = {093111 -},
      year         = {2017},
      abstract     = {Solid state electronics relies on the intentional
                      introduction of impurity atoms or dopants into a
                      semiconductor crystal and/or the formation of junctions
                      between different materials (heterojunctions) to create
                      rectifiers, potential barriers, and conducting pathways.
                      With these building blocks, switching and amplification of
                      electrical currents and voltages are achieved. As
                      miniaturisation continues to ultra-scaled transistors with
                      critical dimensions on the order of ten atomic lengths, the
                      concept of doping to form junctions fails and forming
                      heterojunctions becomes extremely difficult. Here, it is
                      shown that it is not needed to introduce dopant atoms nor is
                      a heterojunction required to achieve the fundamental
                      electronic function of current rectification. Ideal diode
                      behavior or rectification is achieved solely by manipulation
                      of quantum confinement using approximately 2 nm thick
                      films consisting of a single atomic element, the semimetal
                      bismuth. Crucially for nanoelectronics, this approach
                      enables room temperature operation},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000397871600054},
      doi          = {10.1063/1.4977431},
      url          = {https://juser.fz-juelich.de/record/828117},
}