Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films

Gity, Farzan; Ansari, Lida; Mussler, Gregor; Schüffelgen, Peter; Greer, J. C.; Lanius, Martin; Grützmacher, Detlev

doi:10.1063/1.4977431

Journal Article

FZJ-2017-02114

Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films

Gity, F. ; Ansari, L. ; Lanius, M.FZJ* ; Schüffelgen, P.FZJ* ; Mussler, G.FZJ* ; Grützmacher, D.FZJ* ; Greer, J. C. (Corresponding author)

2017
American Inst. of Physics Melville, NY

Applied physics letters 110(9), 093111 - (2017) [10.1063/1.4977431]

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Please use a persistent id in citations: http://hdl.handle.net/2128/16966 doi:10.1063/1.4977431

Abstract: Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages are achieved. As miniaturisation continues to ultra-scaled transistors with critical dimensions on the order of ten atomic lengths, the concept of doping to form junctions fails and forming heterojunctions becomes extremely difficult. Here, it is shown that it is not needed to introduce dopant atoms nor is a heterojunction required to achieve the fundamental electronic function of current rectification. Ideal diode behavior or rectification is achieved solely by manipulation of quantum confinement using approximately 2 nm thick films consisting of a single atomic element, the semimetal bismuth. Crucially for nanoelectronics, this approach enables room temperature operation

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