TY  - JOUR
AU  - Neumann, Christoph
AU  - Rizzi, Leo
AU  - Reichardt, Sven
AU  - Terrés, Bernat
AU  - Khodkov, Timofiy
AU  - Watanabe, Kenji
AU  - Taniguchi, Takashi
AU  - Beschoten, Bernd
AU  - Stampfer, Christoph
TI  - Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride
JO  - ACS applied materials & interfaces
VL  - 8
IS  - 14
SN  - 1944-8252
CY  - Washington, DC
PB  - Soc.
M1  - FZJ-2017-02579
SP  - 9377 - 9383
PY  - 2016
AB  - We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride heterostructures. The technique is based on photoinduced doping by a focused laser beam and does neither require masks nor photoresists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritable, long-term stable doping profiles is limited by only the laser spot size (≈600 nm) and the accuracy of sample positioning. Our optical doping method offers a way to implement and to test different, complex doping patterns in one and the very same graphene device, which is not achievable with conventional gating techniques.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000374274900062
C6  - pmid:26986938
DO  - DOI:10.1021/acsami.6b01727
UR  - https://juser.fz-juelich.de/record/828687
ER  -