Journal Article

FZJ-2017-02579

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride

Neumann, C.RWTH* ; Rizzi, L.RWTH* ; Reichardt, S.RWTH* ; Terrés, B.RWTH*FZJ* ; Khodkov, T.FZJ*RWTH* ; Watanabe, K. ; Taniguchi, T. ; Beschoten, B.RWTH* ; Stampfer, C. (Corresponding author)FZJ*RWTH*

2016
Soc. Washington, DC

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Please use a persistent id in citations: doi:10.1021/acsami.6b01727

Abstract: We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride heterostructures. The technique is based on photoinduced doping by a focused laser beam and does neither require masks nor photoresists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritable, long-term stable doping profiles is limited by only the laser spot size (≈600 nm) and the accuracy of sample positioning. Our optical doping method offers a way to implement and to test different, complex doping patterns in one and the very same graphene device, which is not achievable with conventional gating techniques.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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