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@ARTICLE{Gunkel:828939,
      author       = {Gunkel, Felix and Heinen, Ronja and Hoffmann-Eifert,
                      Susanne and Jin, Lei and Jia, Chun-Lin and Dittmann, Regina},
      title        = {{M}obility {M}odulation and {S}uppression of {D}efect
                      {F}ormation in {T}wo-{D}imensional {E}lectron {S}ystems by
                      {C}harge-{T}ransfer {M}anagement{RC}},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {9},
      number       = {12},
      issn         = {1944-8252},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2017-02759},
      pages        = {10888 - 10896},
      year         = {2017},
      abstract     = {Electron mobility is one of the most-debated key attributes
                      of low-dimensional electron systems emerging at complex
                      oxide heterointerfaces. However, a common understanding of
                      how electron mobility can be optimized in these systems has
                      not been achieved so far. Here, we discuss a novel approach
                      for achieving a systematic increase in electron mobility in
                      polar/nonpolar perovskite interfaces by suppressing the
                      thermodynamically required defect formation at the
                      nanoscale. We discuss the transport properties of electron
                      gases established at interfaces between SrTiO3 and various
                      polar perovskites [LaAlO3, NdGaO3, and (La,Sr)(Al,Ta)O3],
                      allowing for the individual variation of epitaxial strain
                      and charge transfer among these epitaxial interfaces. As we
                      show, the reduced charge transfer at (La,Sr)(Al,Ta)O3/SrTiO3
                      interfaces yields a systematic increase in electron
                      mobility, while the reduced epitaxial strain has only minor
                      impact. As thermodynamic continuum simulations suggest, the
                      charge transfer across these interfaces affects both the
                      spatial distribution of electrons and the background
                      distribution of ionic defects, acting as major scatter
                      centers within the potential well. Easing charge transfer in
                      (La,Sr)(Al,Ta)O3/SrTiO3 yields an enlarged spatial
                      separation of mobile charge carriers and scattering centers,
                      as well as a reduced driving force for the formation of
                      ionic defects at the nanoscale. Our results suggest a
                      general recipe for achieving electron enhancements at oxide
                      heterostructure interfaces and provide new perspectives for
                      atomistic understanding of electron scattering in these
                      systems.},
      cin          = {PGI-7 / PGI-6 / ER-C-1 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-6-20110106 /
                      I:(DE-Juel1)ER-C-1-20170209 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000398246900065},
      doi          = {10.1021/acsami.7b00905},
      url          = {https://juser.fz-juelich.de/record/828939},
}