% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Schonhals:829955,
author = {Schonhals, A. and Mohr, J. and Wouters, D. J. and Waser, R.
and Menzel, S.},
title = {3-bit {R}esistive {RAM} {W}rite-{R}ead {S}cheme {B}ased on
{C}omplementary {S}witching {M}echanism},
journal = {IEEE electron device letters},
volume = {38},
number = {4},
issn = {1558-0563},
address = {New York, NY},
publisher = {IEEE},
reportid = {FZJ-2017-03559},
pages = {449 - 452},
year = {2017},
abstract = {While standard bipolar switching RRAM memory devices can be
programmed into different resistance states, the
complementary switching mechanism allows for two distinct
switching locations that each can be programmed to these
resistance states. In this letter, we present a technique to
discriminate these switching locations and report on a novel
scheme allowing for sub-μs pulse write and read of eight
different logic states in Pt/Ta2O5/Ta/Pt devices by using
only four different resistive states. Thus, in addition to
the multilevel capability of bipolar switching devices,
double the information can be stored and read in a single
complementary switching device.},
cin = {PGI-7 / UK-S},
ddc = {620},
cid = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)UK-S-20160303},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000398905400010},
doi = {10.1109/LED.2017.2670642},
url = {https://juser.fz-juelich.de/record/829955},
}