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@ARTICLE{Schonhals:829955,
      author       = {Schonhals, A. and Mohr, J. and Wouters, D. J. and Waser, R.
                      and Menzel, S.},
      title        = {3-bit {R}esistive {RAM} {W}rite-{R}ead {S}cheme {B}ased on
                      {C}omplementary {S}witching {M}echanism},
      journal      = {IEEE electron device letters},
      volume       = {38},
      number       = {4},
      issn         = {1558-0563},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2017-03559},
      pages        = {449 - 452},
      year         = {2017},
      abstract     = {While standard bipolar switching RRAM memory devices can be
                      programmed into different resistance states, the
                      complementary switching mechanism allows for two distinct
                      switching locations that each can be programmed to these
                      resistance states. In this letter, we present a technique to
                      discriminate these switching locations and report on a novel
                      scheme allowing for sub-μs pulse write and read of eight
                      different logic states in Pt/Ta2O5/Ta/Pt devices by using
                      only four different resistive states. Thus, in addition to
                      the multilevel capability of bipolar switching devices,
                      double the information can be stored and read in a single
                      complementary switching device.},
      cin          = {PGI-7 / UK-S},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)UK-S-20160303},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000398905400010},
      doi          = {10.1109/LED.2017.2670642},
      url          = {https://juser.fz-juelich.de/record/829955},
}