Journal Article

FZJ-2017-03559

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png 3-bit Resistive RAM Write-Read Scheme Based on Complementary Switching Mechanism

Schonhals, A. ; Mohr, J.FZJ* ; Wouters, D. J. ; Waser, R.FZJ* ; Menzel, S.FZJ*

2017
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/LED.2017.2670642

Abstract: While standard bipolar switching RRAM memory devices can be programmed into different resistance states, the complementary switching mechanism allows for two distinct switching locations that each can be programmed to these resistance states. In this letter, we present a technique to discriminate these switching locations and report on a novel scheme allowing for sub-μs pulse write and read of eight different logic states in Pt/Ta2O5/Ta/Pt devices by using only four different resistive states. Thus, in addition to the multilevel capability of bipolar switching devices, double the information can be stored and read in a single complementary switching device.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. UK-S (UK-S)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017

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Database coverage:
Current Contents - Engineering, Computing and Technology ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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