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@PHDTHESIS{Zhang:830262,
author = {Zhang, Chao},
title = {{I}nterface and {T}opography {O}ptimizationfor
{T}hin-{F}ilm {S}ilicon {S}olar {C}ells with
{D}oped{M}icrocrystalline {S}ilicon {O}xide {L}ayers},
volume = {360},
school = {RWTH Aachen},
type = {Dr.},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2017-03835},
isbn = {978-3-95806-209-2},
series = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
Umwelt / Energy $\&$ Environment},
pages = {VII, 156 S.},
year = {2017},
note = {RWTH Aachen, Diss., 2016},
abstract = {Low cost and low material consumption are the most import
advantages of thin-film silicon solar cells. The possibility
to manufacture in large scale makes this technology an
alternative photovoltaic technology that is suitable for
mass production comparable to multi- and monocrystalline
silicon solar cells. Also, compared to other thin-film solar
cells that are based on CdTe or CIGS there is neither a
limitation in supply of rare elements like tellurium and
indium, nor toxic cadmium is used. However, conversion
efficiency remains in a rather low level. The improvement of
conversion efficiency due to application of optically
advanced materials as hydrogenated microcrystalline silicon
oxide and the efficient usage of solar cell textures are
topics of this work. Moreover, optical and electrical loss
mechanisms in thin-film silicon solar cells are discussed.
The application of superior materials combined with
optimized front textures can contribute to the development
of more efficient and economically competitive future
thin-film silicon solar cells. In this work n- and p-type
hydrogenated microcrystalline silicon oxide
($\mu$c-SiO$_{x}$:H)films were developed and implemented at
different positions within a solar cell. This can be as a
transparent contact or window layer in hydrogenated
amorphous (a-Si:H) or microcrystalline silicon ($\mu$c-Si:H)
single junction solar cells; as intermediate reflector layer
in a-Si:H/$\mu$c-Si:H tandem solar cells or as part of a
more effective back reflector insingle and tandem solar
cells. Higher transparency, solar grade electrical
conductivity, low-ohmic contact to sputtered ZnO:Al and
tunable refractive index make n- and p-type
$\mu$c-SiO$_{x}$:H a versatile and advanced material
compared to commonly used doped layers. In this work n- and
p-type $\mu$c-SiO$_{x}$:H layers were fabricated with a
conductivity of up to 10$^{-2}$ S/cm and a Raman
crystallinity of ~60\%. Furthermore, a broad range of
optical properties (band gap E$_{04}$ from 2.0 eV to 2.7 eV
and refractive index n from 1.8 to 3.2) for n-type
$\mu$c-SiO$_{0}$x:H (E$_{04}$ from 2.1 eV to 2.8 eV and n
1.6 to 2.6) for p-type $\mu$c-SiO$_{x}$:H films are
presented. These properties can be tuned by adapting
deposition parameters e.g. the CO$_{2}$/SiH$_{4}$ deposition
gas ratio.[...]},
cin = {IEK-5},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {121 - Solar cells of the next generation (POF3-121)},
pid = {G:(DE-HGF)POF3-121},
typ = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
url = {https://juser.fz-juelich.de/record/830262},
}