Book/Dissertation / PhD Thesis

FZJ-2017-03835

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Interface and Topography Optimizationfor Thin-Film Silicon Solar Cells with DopedMicrocrystalline Silicon Oxide Layers

Zhang, C. (Corresponding author)FZJ*

2017
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag Jülich
ISBN: 978-3-95806-209-2

Please use a persistent id in citations: http://hdl.handle.net/2128/14557

Abstract: Low cost and low material consumption are the most import advantages of thin-film silicon solar cells. The possibility to manufacture in large scale makes this technology an alternative photovoltaic technology that is suitable for mass production comparable to multi- and monocrystalline silicon solar cells. Also, compared to other thin-film solar cells that are based on CdTe or CIGS there is neither a limitation in supply of rare elements like tellurium and indium, nor toxic cadmium is used. However, conversion efficiency remains in a rather low level. The improvement of conversion efficiency due to application of optically advanced materials as hydrogenated microcrystalline silicon oxide and the efficient usage of solar cell textures are topics of this work. Moreover, optical and electrical loss mechanisms in thin-film silicon solar cells are discussed. The application of superior materials combined with optimized front textures can contribute to the development of more efficient and economically competitive future thin-film silicon solar cells. In this work n- and p-type hydrogenated microcrystalline silicon oxide ($\mu$c-SiO$_{x}$:H)films were developed and implemented at different positions within a solar cell. This can be as a transparent contact or window layer in hydrogenated amorphous (a-Si:H) or microcrystalline silicon ($\mu$c-Si:H) single junction solar cells; as intermediate reflector layer in a-Si:H/$\mu$c-Si:H tandem solar cells or as part of a more effective back reflector insingle and tandem solar cells. Higher transparency, solar grade electrical conductivity, low-ohmic contact to sputtered ZnO:Al and tunable refractive index make n- and p-type $\mu$c-SiO$_{x}$:H a versatile and advanced material compared to commonly used doped layers. In this work n- and p-type $\mu$c-SiO$_{x}$:H layers were fabricated with a conductivity of up to 10$^{-2}$ S/cm and a Raman crystallinity of ~60%. Furthermore, a broad range of optical properties (band gap E$_{04}$ from 2.0 eV to 2.7 eV and refractive index n from 1.8 to 3.2) for n-type $\mu$c-SiO$_{0}$x:H (E$_{04}$ from 2.1 eV to 2.8 eV and n 1.6 to 2.6) for p-type $\mu$c-SiO$_{x}$:H films are presented. These properties can be tuned by adapting deposition parameters e.g. the CO$_{2}$/SiH$_{4}$ deposition gas ratio.[...]

Note: RWTH Aachen, Diss., 2016

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Contributing Institute(s):

1. Photovoltaik (IEK-5)

Research Program(s):

1. 121 - Solar cells of the next generation (POF3-121) (POF3-121)

Appears in the scientific report 2017

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