Book/Dissertation / PhD Thesis FZJ-2017-03835

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Interface and Topography Optimizationfor Thin-Film Silicon Solar Cells with DopedMicrocrystalline Silicon Oxide Layers



2017
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag Jülich
ISBN: 978-3-95806-209-2

Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Schriften des Forschungszentrums Jülich Reihe Energie & Umwelt / Energy & Environment 360, VII, 156 S. () = RWTH Aachen, Diss., 2016

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Abstract: Low cost and low material consumption are the most import advantages of thin-film silicon solar cells. The possibility to manufacture in large scale makes this technology an alternative photovoltaic technology that is suitable for mass production comparable to multi- and monocrystalline silicon solar cells. Also, compared to other thin-film solar cells that are based on CdTe or CIGS there is neither a limitation in supply of rare elements like tellurium and indium, nor toxic cadmium is used. However, conversion efficiency remains in a rather low level. The improvement of conversion efficiency due to application of optically advanced materials as hydrogenated microcrystalline silicon oxide and the efficient usage of solar cell textures are topics of this work. Moreover, optical and electrical loss mechanisms in thin-film silicon solar cells are discussed. The application of superior materials combined with optimized front textures can contribute to the development of more efficient and economically competitive future thin-film silicon solar cells. In this work n- and p-type hydrogenated microcrystalline silicon oxide ($\mu$c-SiO$_{x}$:H)films were developed and implemented at different positions within a solar cell. This can be as a transparent contact or window layer in hydrogenated amorphous (a-Si:H) or microcrystalline silicon ($\mu$c-Si:H) single junction solar cells; as intermediate reflector layer in a-Si:H/$\mu$c-Si:H tandem solar cells or as part of a more effective back reflector insingle and tandem solar cells. Higher transparency, solar grade electrical conductivity, low-ohmic contact to sputtered ZnO:Al and tunable refractive index make n- and p-type $\mu$c-SiO$_{x}$:H a versatile and advanced material compared to commonly used doped layers. In this work n- and p-type $\mu$c-SiO$_{x}$:H layers were fabricated with a conductivity of up to 10$^{-2}$ S/cm and a Raman crystallinity of ~60%. Furthermore, a broad range of optical properties (band gap E$_{04}$ from 2.0 eV to 2.7 eV and refractive index n from 1.8 to 3.2) for n-type $\mu$c-SiO$_{0}$x:H (E$_{04}$ from 2.1 eV to 2.8 eV and n 1.6 to 2.6) for p-type $\mu$c-SiO$_{x}$:H films are presented. These properties can be tuned by adapting deposition parameters e.g. the CO$_{2}$/SiH$_{4}$ deposition gas ratio.[...]


Note: RWTH Aachen, Diss., 2016

Contributing Institute(s):
  1. Photovoltaik (IEK-5)
Research Program(s):
  1. 121 - Solar cells of the next generation (POF3-121) (POF3-121)

Appears in the scientific report 2017
Database coverage:
Creative Commons Attribution CC BY 4.0 ; OpenAccess
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The record appears in these collections:
Institute Collections > IMD > IMD-3
Document types > Theses > Ph.D. Theses
Document types > Books > Books
Workflow collections > Public records
IEK > IEK-5
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Open Access

 Record created 2017-05-30, last modified 2024-07-12