Influence of the Oxygen Defect Levels on Switching and Current Transport Properties in Valence Change Memory Cells - JuSER

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Conference Presentation (Other)

Influence of the Oxygen Defect Levels on Switching and Current Transport Properties in Valence Change Memory Cells

Menzel, S.FZJ* ; Funck, C.FZJ* ; Marchewka, A. ; Bäumer, C.FZJ* ; Schmidt, P. ; Dittmann, R.FZJ* ; Martin, M. ; Waser, R.FZJ*

2017

Solid State Ionics, (SSI 2017), Padua, Italy, 18 Jun 2017 - 23 Jun 2017

Contributing Institute(s):

Elektronische Materialien (PGI-7)

Research Program(s):

521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017

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Document types > Presentations > Conference Presentations
Institute Collections > PGI > PGI-7
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Publications database

Record created 2017-07-05, last modified 2021-01-29

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