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| Home > Publications database > Influence of the Oxygen Defect Levels on Switching and Current Transport Properties in Valence Change Memory Cells > print |
| 001 | 834526 | ||
| 005 | 20210129230707.0 | ||
| 037 | _ | _ | |a FZJ-2017-04455 |
| 100 | 1 | _ | |a Menzel, Stephan |0 P:(DE-Juel1)158062 |b 0 |u fzj |
| 111 | 2 | _ | |a Solid State Ionics |g (SSI 2017) |c Padua |d 2017-06-18 - 2017-06-23 |w Italy |
| 245 | _ | _ | |a Influence of the Oxygen Defect Levels on Switching and Current Transport Properties in Valence Change Memory Cells |
| 260 | _ | _ | |c 2017 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
| 336 | 7 | _ | |a Conference Presentation |b conf |m conf |0 PUB:(DE-HGF)6 |s 1499251189_16481 |2 PUB:(DE-HGF) |x Other |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
| 700 | 1 | _ | |a Funck, Carsten |0 P:(DE-Juel1)165703 |b 1 |u fzj |
| 700 | 1 | _ | |a Marchewka, A. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Bäumer, Christoph |0 P:(DE-Juel1)159254 |b 3 |u fzj |
| 700 | 1 | _ | |a Schmidt, Philipp |0 P:(DE-Juel1)171607 |b 4 |
| 700 | 1 | _ | |a Dittmann, Regina |0 P:(DE-Juel1)130620 |b 5 |u fzj |
| 700 | 1 | _ | |a Martin, Manfred |0 P:(DE-Juel1)167535 |b 6 |
| 700 | 1 | _ | |a Waser, R. |0 P:(DE-Juel1)131022 |b 7 |u fzj |
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| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2017 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-7-20110106 |k PGI-7 |l Elektronische Materialien |x 0 |
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| 980 | _ | _ | |a UNRESTRICTED |
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