%0 Journal Article
%A Afanas'ev, V. V.
%A Schulte-Braucks, C.
%A Wirths, S.
%A Schubert, J.
%A Buca, D.
%T Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge$_{1−x}$ Sn$_{x}$ , Si$_{y}$ Ge$_{1−x-y}$ Sn$_{x}$ ) with Al$_{2}$ O$_{3}$
%J Microelectronic engineering
%V 178
%@ 0167-9317
%C [S.l.]
%I Elsevier
%M FZJ-2017-04662
%P 141 - 144
%D 2017
%X Experiments on internal photoemission of electrons at interfaces of SiyGe1−x−ySnx binary and ternary alloys (0≤ x ≤ 0.11; 0 ≤ y ≤ 0.19) with amorphous insulating Al2O3 reveal that the application of an additional oxidationstep (5 min in dry O3 at 300 °C) after atomic layer deposition of first ≈1 nm of alumina results in a significantincrease of the electron barrier height (by ≈0.4–0.5 eV) as compared to the conventionally grown Al2O3 layers.Furthermore, this supplemental oxidation step facilitates the removal of Ge sub-oxides from the interface. Theobserved electron barrier enhancement is suggested to be caused by formation of awide gap germanate interlayerbetween the Ge-based semiconductors and alumina. © 2017 Published by Elsevier B.V.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000404703800033
%R 10.1016/j.mee.2017.05.011
%U https://juser.fz-juelich.de/record/834771