Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge$_{1−x}$ Sn$_{x}$ , Si$_{y}$ Ge$_{1−x-y}$ Sn$_{x}$ ) with Al$_{2}$ O$_{3}$

Afanas'ev, V. V.; Schulte-Braucks, C.; Buca, D.; Schubert, J.; Wirths, S.

doi:10.1016/j.mee.2017.05.011

Journal Article

FZJ-2017-04662

Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge$_{1−x}$ Sn$_{x}$ , Si$_{y}$ Ge$_{1−x-y}$ Sn$_{x}$ ) with Al$_{2}$ O$_{3}$

Afanas'ev, V. V. (Corresponding author) ; Schulte-Braucks, C.FZJ* ; Wirths, S.FZJ* ; Schubert, J.FZJ* ; Buca, D.FZJ*

2017
Elsevier [S.l.]

Microelectronic engineering 178, 141 - 144 (2017) [10.1016/j.mee.2017.05.011]

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Please use a persistent id in citations: doi:10.1016/j.mee.2017.05.011

Abstract: Experiments on internal photoemission of electrons at interfaces of SiyGe1−x−ySnx binary and ternary alloys (0≤ x ≤ 0.11; 0 ≤ y ≤ 0.19) with amorphous insulating Al2O3 reveal that the application of an additional oxidationstep (5 min in dry O3 at 300 °C) after atomic layer deposition of first ≈1 nm of alumina results in a significantincrease of the electron barrier height (by ≈0.4–0.5 eV) as compared to the conventionally grown Al2O3 layers.Furthermore, this supplemental oxidation step facilitates the removal of Ge sub-oxides from the interface. Theobserved electron barrier enhancement is suggested to be caused by formation of awide gap germanate interlayerbetween the Ge-based semiconductors and alumina. © 2017 Published by Elsevier B.V.

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