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000834771 1001_ $$0P:(DE-HGF)0$$aAfanas'ev, V. V.$$b0$$eCorresponding author
000834771 245__ $$aOxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge$_{1−x}$ Sn$_{x}$ , Si$_{y}$ Ge$_{1−x-y}$ Sn$_{x}$ ) with Al$_{2}$ O$_{3}$
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000834771 520__ $$aExperiments on internal photoemission of electrons at interfaces of SiyGe1−x−ySnx binary and ternary alloys (0≤ x ≤ 0.11; 0 ≤ y ≤ 0.19) with amorphous insulating Al2O3 reveal that the application of an additional oxidationstep (5 min in dry O3 at 300 °C) after atomic layer deposition of first ≈1 nm of alumina results in a significantincrease of the electron barrier height (by ≈0.4–0.5 eV) as compared to the conventionally grown Al2O3 layers.Furthermore, this supplemental oxidation step facilitates the removal of Ge sub-oxides from the interface. Theobserved electron barrier enhancement is suggested to be caused by formation of awide gap germanate interlayerbetween the Ge-based semiconductors and alumina. © 2017 Published by Elsevier B.V.
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000834771 7001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, C.$$b1
000834771 7001_ $$0P:(DE-HGF)0$$aWirths, S.$$b2
000834771 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b3
000834771 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b4
000834771 773__ $$0PERI:(DE-600)1497065-x$$a10.1016/j.mee.2017.05.011$$gVol. 178, p. 141 - 144$$p141 - 144$$tMicroelectronic engineering$$v178$$x0167-9317$$y2017
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