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@ARTICLE{Afanasev:834771,
      author       = {Afanas'ev, V. V. and Schulte-Braucks, C. and Wirths, S. and
                      Schubert, J. and Buca, D.},
      title        = {{O}xidation-induced electron barrier enhancement at
                      interfaces of {G}e-based semiconductors ({G}e,
                      {G}e$_{1−x}$ {S}n$_{x}$ , {S}i$_{y}$ {G}e$_{1−x-y}$
                      {S}n$_{x}$ ) with {A}l$_{2}$ {O}$_{3}$},
      journal      = {Microelectronic engineering},
      volume       = {178},
      issn         = {0167-9317},
      address      = {[S.l.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2017-04662},
      pages        = {141 - 144},
      year         = {2017},
      abstract     = {Experiments on internal photoemission of electrons at
                      interfaces of SiyGe1−x−ySnx binary and ternary alloys
                      (0≤ x ≤ 0.11; 0 ≤ y ≤ 0.19) with amorphous
                      insulating Al2O3 reveal that the application of an
                      additional oxidationstep (5 min in dry O3 at 300 °C) after
                      atomic layer deposition of first ≈1 nm of alumina results
                      in a significantincrease of the electron barrier height (by
                      ≈0.4–0.5 eV) as compared to the conventionally grown
                      Al2O3 layers.Furthermore, this supplemental oxidation step
                      facilitates the removal of Ge sub-oxides from the interface.
                      Theobserved electron barrier enhancement is suggested to be
                      caused by formation of awide gap germanate interlayerbetween
                      the Ge-based semiconductors and alumina. © 2017 Published
                      by Elsevier B.V.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000404703800033},
      doi          = {10.1016/j.mee.2017.05.011},
      url          = {https://juser.fz-juelich.de/record/834771},
}