Home > Publications database > Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge$_{1−x}$ Sn$_{x}$ , Si$_{y}$ Ge$_{1−x-y}$ Sn$_{x}$ ) with Al$_{2}$ O$_{3}$ > print

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100 1 _ |a Afanas'ev, V. V.
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245 _ _ |a Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge$_{1−x}$ Sn$_{x}$ , Si$_{y}$ Ge$_{1−x-y}$ Sn$_{x}$ ) with Al$_{2}$ O$_{3}$
260 _ _ |a [S.l.]
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520 _ _ |a Experiments on internal photoemission of electrons at interfaces of SiyGe1−x−ySnx binary and ternary alloys (0≤ x ≤ 0.11; 0 ≤ y ≤ 0.19) with amorphous insulating Al2O3 reveal that the application of an additional oxidationstep (5 min in dry O3 at 300 °C) after atomic layer deposition of first ≈1 nm of alumina results in a significantincrease of the electron barrier height (by ≈0.4–0.5 eV) as compared to the conventionally grown Al2O3 layers.Furthermore, this supplemental oxidation step facilitates the removal of Ge sub-oxides from the interface. Theobserved electron barrier enhancement is suggested to be caused by formation of awide gap germanate interlayerbetween the Ge-based semiconductors and alumina. © 2017 Published by Elsevier B.V.
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700 1 _ |a Buca, D.
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