% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Liu:836903,
      author       = {Liu, Yong and Kim, Do Yun and Lambertz, Andreas and Ding,
                      Kaining},
      title        = {{P}ost-deposition catalytic-doping of microcrystalline
                      silicon thin layer for application in silicon heterojunction
                      solar cell},
      journal      = {Thin solid films},
      volume       = {635},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2017-05935},
      pages        = {63 - 65},
      year         = {2017},
      abstract     = {The silicon heterojunction (SHJ) solar cell is one of the
                      most promising candidates for the next-generation
                      high-efficiency mainstream photovoltaic technology. It
                      consists of a crystalline silicon wafer coated with a stack
                      of functional thin-films on both sides. Conventionally,
                      intrinsic and doped hydrogenated amorphous silicon (a-Si:H)
                      is used as the passivation layer and emitter or back surface
                      field (BSF), respectively. Hydrogenated microcrystalline
                      silicon (μc-Si:H) is considered as a more advantageous
                      alternative to the a-Si:H emitter and BSF layers due to
                      μc-Si:H's higher electrical conductivity giving rise to
                      lower series resistance. In this contribution, we use the
                      catalytic doping process, so-called “Cat-doping”, to
                      post-dope n-μc-Si:H thin-layers in such a way that the
                      conductivity can be increased to higher levels than those
                      achievable in as-grown n-μc-Si:H for the application in SHJ
                      solar cells. We show that the conductivity of the μc-Si:H
                      films notably increases after the Cat-doping. We also
                      investigated the impact of Cat-doping on the conductivity of
                      the different μc-Si:H and on lifetime.},
      cin          = {IEK-5},
      ddc          = {070},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000404503600013},
      doi          = {10.1016/j.tsf.2017.02.003},
      url          = {https://juser.fz-juelich.de/record/836903},
}