Journal Article

FZJ-2017-06168

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices

Baeumer, C. (Corresponding author)FZJ* ; Valenta, R.FZJ* ; Schmitz, C.FZJ* ; Locatelli, A. ; Menteş, T. O. ; Rogers, S. P. ; Sala, A. ; Raab, N.FZJ* ; Nemsak, S.FZJ* ; Shim, M. ; Schneider, C. M.FZJ* ; Menzel, S.FZJ* ; Waser, R.FZJ* ; Dittmann, R.FZJ*

2017
Soc. Washington, DC

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Please use a persistent id in citations: doi:10.1021/acsnano.7b02113

Abstract: A major obstacle for the implementation of redox-based memristive memory or logic technology is the large cycle-to-cycle and device-to-device variability. Here, we use spectromicroscopic photoemission threshold analysis and operando XAS analysis to experimentally investigate the microscopic origin of the variability. We find that some devices exhibit variations in the shape of the conductive filament or in the oxygen vacancy distribution at and around the filament. In other cases, even the location of the active filament changes from one cycle to the next. We propose that both effects originate from the coexistence of multiple (sub)filaments and that the active, current-carrying filament may change from cycle to cycle. These findings account for the observed variability in device performance and represent the scientific basis, rather than prior purely empirical engineering approaches, for developing stable memristive devices.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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