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@ARTICLE{Baeumer:837189,
      author       = {Baeumer, Christoph and Valenta, Richard and Schmitz,
                      Christoph and Locatelli, Andrea and Menteş, Tevfik Onur and
                      Rogers, Steven P. and Sala, Alessandro and Raab, Nicolas and
                      Nemsak, Slavomir and Shim, Moonsub and Schneider, Claus M.
                      and Menzel, Stephan and Waser, R. and Dittmann, Regina},
      title        = {{S}ubfilamentary {N}etworks {C}ause {C}ycle-to-{C}ycle
                      {V}ariability in {M}emristive {D}evices},
      journal      = {ACS nano},
      volume       = {11},
      number       = {7},
      issn         = {1936-086X},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2017-06168},
      pages        = {6921 - 6929},
      year         = {2017},
      abstract     = {A major obstacle for the implementation of redox-based
                      memristive memory or logic technology is the large
                      cycle-to-cycle and device-to-device variability. Here, we
                      use spectromicroscopic photoemission threshold analysis and
                      operando XAS analysis to experimentally investigate the
                      microscopic origin of the variability. We find that some
                      devices exhibit variations in the shape of the conductive
                      filament or in the oxygen vacancy distribution at and around
                      the filament. In other cases, even the location of the
                      active filament changes from one cycle to the next. We
                      propose that both effects originate from the coexistence of
                      multiple (sub)filaments and that the active,
                      current-carrying filament may change from cycle to cycle.
                      These findings account for the observed variability in
                      device performance and represent the scientific basis,
                      rather than prior purely empirical engineering approaches,
                      for developing stable memristive devices.},
      cin          = {PGI-7 / PGI-6},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-6-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000406649700040},
      doi          = {10.1021/acsnano.7b02113},
      url          = {https://juser.fz-juelich.de/record/837189},
}