%0 Journal Article
%A Lüpke, Felix
%A Just, Sven
%A Bihlmayer, Gustav
%A Lanius, Martin
%A Luysberg, Martina
%A Doležal, Jiří
%A Neumann, Elmar
%A Cherepanov, Vasily
%A Ošt'ádal, Ivan
%A Mussler, Gregor
%A Grützmacher, Detlev
%A Voigtländer, Bert
%T Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111)
%J Physical review / B
%V 96
%N 3
%@ 2469-9950
%C Woodbury, NY
%I Inst.
%M FZJ-2017-06569
%P 035301
%D 2017
%X We present a combined experimental and theoretical analysis of a Te rich interface layer which represents a template for chalcogenide-based van der Waals epitaxy on Si(111). On a clean Si(111)-(1×1) surface, we find Te to form a Te/Si(111)-(1×1) reconstruction to saturate the substrate bonds. A problem arising is that such an interface layer can potentially be highly conductive, undermining the applicability of the on-top grown films in electric devices. We perform here a detailed structural analysis of the pristine Te termination and present direct measurements of its electrical conductivity by in situ distance-dependent four-probe measurements. The experimental results are analyzed with respect to density functional theory calculations and the implications of the interface termination with respect to the electrical conductivity of chalcogenide-based topological insulator thin films are discussed. In detail, we find a Te/Si(111)-(1×1) interface conductivity of σTe2D=2.6(5)×10−7S/□, which is small compared to the typical conductivity of topological surface states.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000405023400007
%R 10.1103/PhysRevB.96.035301
%U https://juser.fz-juelich.de/record/837709